Solid-state microwave annealing of ion-implanted 4H–SiC
نویسندگان
چکیده
Solid-state microwave annealing was performed at temperatures up to 2120 C for 30 s on ion-implanted 4H–SiC in N2 ambient. The surface roughness in the samples annealed without a surface cap at 1950 C is 2.65 nm for 10 lm · 10 lm atomic force microscopy scans. The sheet resistances measured on Aland P-implanted 4H–SiC, annealed by microwaves, are lower than the best conventional furnace annealing results reported in literature. X-ray diffraction spectra indicate alleviation of the lattice damage induced by the ionimplantation and also incorporation of most of the implanted species into substitutional lattice sites. 2007 Elsevier B.V. All rights reserved.
منابع مشابه
Ultrahigh-temperature microwave annealing of Al+- and P+-implanted 4H-SiC
In this work, an ultrafast solid-state microwave annealing has been performed, in the temperature range of 1700–2120 °C on Al+and P+-implanted 4H-SiC. The solid-state microwave system used in this study is capable of raising the SiC sample temperatures to extremely high values, at heating rates of 600 °C/s. The samples were annealed for 5–60 s in a pure nitrogen ambient. Atomic force microscopy...
متن کاملCorrelation of Interface Characteristics to Electron Mobility in Channel- implanted 4H-SiC MOSFETs
To study mobility limiting mechanisms in (0001) 4H-SiC, lateral n-channel MOSFETs in p-implanted wells on n-type epitaxial layers were manufactured and additionally selectively shallow implanted with different nitrogen (N) doses in the channel region. The mobility was found to be limited by Columbic scattering at low electric fields. Further surface roughness scattering was considered as a poss...
متن کاملTEM-characterization of magnetic samarium- and cobalt-rich-nanocrystals formed in hexagonal SiC
Using analytical transmission electron microscopy techniques, nanocrystals embedded in 4H–SiC are studied which formed after high dose samarium (Sm), cobalt (Co), and Sm-and-Co-ion implantations and annealing. SmSi2, Sm5C2, Co2Si and SmCo-rich nanocrystals have been identified in terms of their crystallography, shape, strain, size, and orientation relationship to the matrix. It is shown, moreov...
متن کاملRearrangement of the oxide-semiconductor interface in annealed Al2O3/4H-SiC structures
Al2O3 films with different thicknesses have been deposited on n-type nitrogen-doped 4H-SiC 0001 epitaxial samples by atomic layer chemical vapor deposition at 300 °C and subsequently annealed in Ar atmosphere at temperatures up to 1000 °C. The Al2O3/4H-SiC structures were analyzed by x-ray photoelectron spectroscopy XPS , secondary ion mass spectrometry SIMS , and transmission electron microsco...
متن کاملDesign of 1.7 to 14kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC
In this paper, a high voltage normally-off trenched-and-implanted vertical JFET (TIVJFET) in 4H-SiC is investigated by way of two-dimensional numerical simulations. The structure is simple to fabricate and is expected to be able to achieve a high current density. Detailed designs are presented for 1.7kV to 14kV normally-off 4H-SiC VJFETs. A good agreement has been reached between computer model...
متن کامل